Abstract
X-ray line profile analysis was applied to obtain structural parameters crystal lattice, grain size, micro-strain, dislocation density, dislocation arrangement, and the distance between two dislocations) of In3Te4 crystals. The samples were prepared by a special modification of vertical Bridgman -Stockbarger technique. This method was examined for the first time. The Bragg peak line shapes of In3Te4 crystals were analyzed using Scherrer equation, Williamson – Hall plot, and Warren - Averbach method. The effect of dislocation density on carrier mobility and carrier concentration was cheked. We concluded that the grown crystal is tetragonal In3Te4 crystal. The lattice parameters of the tetragonal In3Te4 have been calculated from 013), 020), 113), 015), 220), 222), 132), 332), 242), and 244) reflection planes. The density of dislocations, the average distance between the adjacent dislocation, the dislocation arrangement parameter, Hall mobility and carrier density have the values: 1.6 x 10-14 m-2, 8.27 nm, 0.177,339 Cm2 /V. Sec, 1.35 x 1014 Cm-3 respectively.